New Progress in Research on Optical Interconnects on Integrated Circuit Chips

1 = TimesNewRoman1 State Key Laboratory of Application Specific Integrated Circuits and Systems, Fudan University, Shanghai 200433, China 2 Yuanshi 2 Microtechnology Center, 109107, Germany 3 Institute of Microelectronics, Tsinghua University, Beijing 100084, China 4, 1. Reliable Laboratory of Micro Devices and Equipment, Institute of Sexuality and Micro Integration, 209126, the potential advantages of optical interconnection on German road chips. Introduced the new research progress of the basic devices such as the light-emitting devices, light-receiving devices and light-transmitting devices that form the optical interconnection on the chip and their integration with silicon integrated circuits. Finally, the application prospects of optical interconnection on integrated circuit chips are prospected.

1 INTRODUCTION With the rapid increase of the integration degree of the super-large target module and the frequency of Dingzuo, the parasitic effects of interconnections on the chip, such as parasitic capacitance delay time signal crosstalk, etc., have become very significant, becoming a huge problem for the rapid development of integrated circuits. obstacle. The ideal interconnection should have the characteristics of short signal delay time, small crosstalk, low operating frequency bandwidth loss, and low manufacturing cost. There has been a lot of research work on how to reduce the parasitic effect of interconnection, such as the use of low-resistivity metals and alloys to replace the traditional from the development of low dielectric constant materials used as interconnection medium to replace the traditional, 2, to optimize mutual The geometric dimensions and structure of the wiring, etc. These measures have effectively reduced the parasitic effects caused by the interconnection and reduced the delay time and crosstalk. However, when the operating frequency of the integrated circuit is rapidly increased to a few or even higher, the local interconnection based on the gate circuit and the transistor in the metal row unit or functional module is still not suitable for long-distance signal transmission lines, such as providing power and modules for all functional modules The global interconnection of clock signals between 13.001. Then, the 1 gauge interconnection will become the bottleneck restricting the rapid development of integrated circuits, and new interconnection methods must be introduced.

Optical interconnection, as a possible new on-chip interconnection method, has been studied for at least 16 years. 2. It has similarities with metal-based electrical interconnections. The transmission of 1 is in the form of magnetic waves, and all The logical interactions are all realized through electrons. 34. However, compared with conventional metal interconnections, optical interconnections have excellent potential advantages. Higher interconnections integrate larger frequency bandwidths and lower power consumption. Very small signals Signal fan-in and fan-out with large delays and crosstalk are precisely clocked. Synchronization of the two-part system and simplification of the design. 7. These advantages are based on the difference between the inherent physical characteristics of light and electricity. 381 light has a high frequency = 500 The typical clock frequency in the electrical system is 00 and 2 light has a very short wavelength of 500. The wavelength of the transmission signal in the electrical system is 3. The factory 30, 3 light 4 has a large photon energy = 26, and the electricity is Can be 1 to 44. Optical interconnects are used to mediate chips without requiring new physical breakthroughs.

The above-mentioned potential theoretical advantages of optical interconnection have inspired a large number of researchers to devote themselves to optical interconnection-related components and their integration Ruan Gangnan, born in 1935, is a professor and doctoral tutor of Fudan University, engaged in 1 process device and circuit model and Simulation research.

Xia Xiaonv, born in 1971, is a Ph.D. student at the German University of Technology's Microtechnology Center. Her research direction is on-chip electrical and optical interconnection. 1 male, born in 1959, a senior researcher at the Micro Technology Center of the Technical University of Germany, Germany, with a research direction of 1 on-chip interconnection and simulation of micro-process equipment. Received in 200006, 2001 Chinese Institute of Electronics circuit integration, mainly with the research and development of the integration of the shadow 3 integrated circuit, so far has achieved various research results, but the distance optical interconnect is actually used in integrated circuit chips is still quite large the distance. Many key questions, such as material efficiency, size and power consumption of optical interconnect components, compatibility with silicon integrated circuit technology, and production cost, have not yet found the best solution. Experts expect that the technology of integrated circuits will reach the level of o.oym technology in 2012, with an operating frequency of 10, and 9. Local interconnects and intermediate interconnects on the chip still use 1 or 1, 1 alloy combined with low dielectric constant dielectric interconnection methods .

However, the global interconnection is likely to use the optical interconnection method. 1. In the International Semiconductor Technology Development Guide 1999, for example, experts expected that optical interconnection as a huge potential interconnection method will still be in the research stage from 2007 to 2010 Year will be in the development stage. By 2012, it will enter the stage of improvement and pre-production.

The optical interconnection on the chip consists of a basic device, a light-emitting device, which receives electrical signals and converts them into optical signals; a light-receiving device, which detects optical signals and converts them into electrical signals; an optical transmission device, which emits light The optical signal emitted by the device is transmitted to the light receiving device. The process technology to realize the optical interconnection on the chip includes the process technology for preparing the above-mentioned devices and the integrated process technology between them and between them and the integrated circuit chip. This article will discuss this basic element of optical interconnection and their relationship in turn. He 03 new progress in integrated circuit integration and comment on its future development trends and application prospects.

2 New advances in the research of optical interconnects on chips. The requirements for chip-connected seeded wood devices are 1 high stability; 2 high efficiency, which includes the electro-optical conversion efficiency of light emitting devices. The photoelectric conversion efficiency of the light receiving device is high. The transmission efficiency of the optical transmission device is high and the overall signal transmission efficiency when connected is high; 3 small size to achieve a higher density interconnection than the metal interconnection. The high-density bus long interconnection electro-optical conversion response rate is high ; 5 can be integrated on the integrated circuit chip, mainly, the shadow 5 integrated circuit chip, I hope that the integration technology is less difficult and the yield is high and the cost is low. The following is a brief introduction to the new research progress in the current research that has more research and has great potential to be used in optical interconnection, optical transmission devices, optical receiving devices, optical transmission devices, and integration with integrated circuits.

2.1 The light emitting device is a conductor light emitting device. Although silicon is an indirect bandgap semiconductor, its luminescence process must involve phonons. The luminous efficiency is very low, generally lower than 14.1. The modern super-scale circuit can be fabricated on silicon chips, and people want to use it for integrated circuit chips. The light-emitting devices of Shanghai Optical Interconnect can be compatible with the existing technology of integrated circuits to achieve the purpose of low manufacturing cost. Therefore, the development of silicon-based material light-emitting devices has always been widely concerned about the improvement of efficiency, and family materials such as based on 0 ; 8 and 1 are very efficient. At the same time, the junction technology of the Group 1 semiconductor light-emitting device and the silicon integrated circuit is also mature, because the seventeen is made from wood, but it is very good. It can be used in the future optical interconnection.

2.1.1 Silicon-based light-emitting devices have attempted to develop silicon-based light-emitting devices by using porous silicon quantum efficiency and doping with germanium-guine superlattice in the anvil. But so far mainly because the luminous efficiency is too low, there is still a long way to go for optical interconnection, and there is still a long way to go. Among them, porous pit light-emitting devices using porous silicon quantum effects have been studied most recently. Development is fast.

The phenomenon of the glowing phenomenon of porous crush 1 was initially caused. 1.18 et al. Discovered in 1984 that the experimental condition of the inch was low temperature, so it only aroused the interest of a few people. 0. In 1990, the luminescence of porous silicon was observed at room temperature. Since then, Porous Gui has aroused widespread interest, hoping that porous silicon light-emitting devices can be used as silicon-based light-emitting devices for optical interconnection on silicon integrated circuit chips.

Porous silicon luminescence uses the quantum size effect to produce radiation composite luminescence, which is divided into two categories: photoluminescence and electroluminescence. Porous silicon, which is intended to be used as a luminescent material on silicon ultra-large integrated circuits, is generally obtained by anodizing the silicon by dissolving it in a solvent. 12. In the manufacturing process, it can be obtained by controlling the current value of the anode Desired hole occupancy and thickness. As the anti-reflective coating of the light-emitting diode and the non-linear optical material, the pore ratio of porous silicon is generally greater than 7%. 3. In order to be applied to optical interconnection, the porous silicon light-emitting diode needs to have the following characteristics for a stable working time of several years; 1 External electroluminescence efficiency; power output density of not less than 0.2s; the modulation speed of more than 1001, preferably more than 1; the energy can be emitted in the entire frequency range of 1 light and infrared range 1415, which can be consistent with traditional The silicon integrated circuit process is compatible. Below we review the relevant characteristics of porous silicon light-emitting diodes.

The instability of the qualitative porous terrestrial light-emitting diode is caused by the large coating area inside the mountain porous silicon. This person's area puts a large portion of porous silicon in a state where it easily reacts with the outside world. Silicon surface lifted conductor light-emitting devices are divided into silicon-based hair-emitting diodes. The stability of porous silicon light-emitting diodes developed in 1995 is only a few minutes in air and only a few hours under a fixed vacuum. With the deepening of research, its stability is constantly improving.

Luminous efficiency Due to the low carrier injection efficiency from the metal contact of the porous silicon light-emitting diode to the inside of the tube and the low light exposure of the metal contact part 2, 2. By 1995, the power efficiency of the porous silicon light-emitting diode has reached 0.122, and the working current density pin 2 and threshold voltage 2 have been reduced more than before. In the same year, he waited for the result that the efficiency of the light-emitting diode can reach 1 under the condition that the working voltage is 2. And the device works in the state of real armor. The stability reached 1 in 998. The efficiency of the porous silicon light-emitting diode developed by 23 people such as 3 and others has reached the desorption. There is no significant Schottky junction in the silicon light-emitting diode. The radiative recombination luminescence of porous silicon only occurs when the injection current drifts. In order to achieve a high operating frequency, the thickness of the light-emitting diode must be reduced by 24. However, due to the reduced thickness, the electroluminescence intensity of the light-emitting diode is also reduced. 8, etc. 25 reported a kind of Al-Shan hole silicon light-emitting device with better stability in 1998, its signal modulation frequency has reached 200, and pointed out that the main parameters that limit the working speed of the device are the structural capacity in the structure, through optimization The geometry of the device is expected to increase the operating frequency to the 02 range.

The light emitting frequency band can be controlled by the preparation process due to the pore ratio of the porous silicon. Therefore, different light emission wavelengths can be obtained through the porous silicon preparation process control combined with the optimized design and preparation of the structure of the porous silicon light emitting device.

The main types of light 1 green and red can be made from porous silicon light-emitting device porous silicon. In 1999 and other 26, porous silicon microcavity resonators with different wavelengths were produced, whose emission wavelength range was 7078, 1 compatibility with large-scale integrated circuit technology, the integration of large-scale integrated circuits with porous silicon light emitters, now electron beam exposure The amorphous surface of the silicon surface suppresses the form of porous silicon, and the ion spray method enhances the formation of porous silicon. Specially designed processes such as porous silicon regions can be selectively formed on silicon, which is easier to achieve the same as other silicon electronic devices. Chip-based integration.

Wafa Yanzhong Zhongcheng Chengchichi Integrated Factory's bipolar crystal bamboo circuit is at rest, but the operating frequency is still very low. Only 1he1 report also proposed that if a new and improved structure of porous silicon light-emitting diode is adopted, it is expected that Other silicon-based components and complex integrated circuits are integrated. The above research is called the integration of porous silicon and standard integrated circuits. The characteristics of one aspect may be summarized. In order to successfully apply porous silicon light-emitting diodes to optical interconnection, low luminous efficiency is still the largest barrier-based base. In addition to the porous silicon light-emitting devices, there are many researches on silicon light-emitting devices and silicon-germanium superlattice light-emitting devices. However, the luminous efficiency of the former is still in the order of 10 on the latter.

Therefore, it is only expected to be used as a single-tube light-emitting device or applied to optoelectronic integrated circuits, but it is difficult to be applied to optical interconnects on integrated circuit chips. 2.1.2 Group 1 light-emitting devices Due to the high luminous efficiency of Group 1 semiconductor materials, most light-emitting devices are made of Group 1 semiconductor materials. The energy band structure of compound semiconductors composed of different nu group atoms is mediated by a direct band gap, and some is an indirect band gap, and it varies with the composition ratio. Group 1 compound element materials such as human junction bandgap, the wavelength emitted at room temperature can range from the optical band to even greater than 200, Group 29.1 light-emitting devices are divided into two categories: laser and light-emitting diode. The basic structure of the laser is a double heterostructure. It limits electrons and photons to the active area. On both sides of the active layer, there are cleavage planes for forming mirror surfaces of the cavity. The choice of laser material is determined according to the desired wavelength. The wavelength emitted by the device is determined by the optical transition from the conduction band to the valence band in the material. The wavelength of the light emitted by + is 85, and the wavelength of light emitted by 1 is 1300155. The range of light 3. The semiconductor light emitting diode is. Knot heterojunction structure. Compared with laser diodes, the efficiency is usually several percentage points lower, the emitted line width is wide, and the directionality is poor, but the preparation is simple and the cost is low. Semiconductor light emitting diodes are divided into surface light emitting and side light emitting. 8 and people 1; 348 from the combined or uncomposed components, legs into, Ninja ship Zunchi, Xinlin, mouth-embellished tube can emit light with a wavelength of the present, the above light-emitting devices have been successfully used as data links . Remote control and optical fiber communication system and other fields.

The research of the family semiconductor light-emitting devices to be applied to optical interconnection mainly focuses on vertical cavity surface emitting lasers, B and multiple quantum well semiconductor lasers, and Jia lasers.

In addition, the study of the laser edge of the sub-well also has a thinner barrier layer to connect the single quantum, so that the injected carriers can be collected in the quantum well through the tunnel effect to ensure that the stimulated emission is limited. Between states. I have set up a tomb with 4 dry traps to make the transmitter emit the required wavelength. 18; etc. It was made in 979 with a 18 and a 18-man laser with 14 wells. Then it was proposed to optimize the quantity, the height and thickness of the well barrier, so that the injected carriers can effectively overcome the role of the barrier between the wells and be injected into the well. Since then, the research of multiple quantum wells has developed rapidly and new research has been conducted! Lasers with sub-strand and zero-dimensional quantum dot structures have more excellent performance than dimensional quantum well lasers +53. They are expected to obtain sub-microampere lasers with extremely low threshold current, and are expected to significantly improve the spectral linewidth and dynamics of the laser Modulate rate and improve temperature stability. However, the manufacture of quantum wire and quantum dot lasers requires extremely fine advantages, except that it is used to make light-emitting devices. It can also be used to make light receiving edges. However, 1 requires an additional light-receiving device to detect the light. A well laser array has been fabricated, 1 has been bonded to 16 circuit chips. Their performance is good enough to prove that the large experimental system can be realized.

Since modern VLSIs are manufactured on silicon chips, Group 1 light-emitting devices must be integrated on silicon chips to be used for optical interconnects on chips, compatible with standard micro-tuning processes. At present, many optoelectronics and microelectronics workers have devoted themselves to the research of Group 1 light-emitting devices and standard microelectronic circuits. The integrated method can be divided into monolithic growth and combined technology called inflammation.

In terms of tissue growth, many literatures have reported the results of Group 1 devices growing directly on silicon wafers. The earliest 0; 81 0 into 8 laser was first grown on a silicon wafer with germanium, layer 54 and later directly grown on the silicon wafer by the method of river 55, followed by the application of 0; the method of the laser biochemical baby 5. Subsequent reports of the growth of Group 1 lasers on silicon wafers have continued to occur +62. However, there are still many questions about the method of monolithic growth integration of Group 1 lasers and silicon integrated circuits. The temperature in the silicon process can be high to ensure that the original 1 diffuses outward. In addition, there are a lot of dislocations caused by lattice mismatch on the interface of silicon, and the stress is also great. This is bound to reduce the performance of the device.

The combination of the family light emitting device and the silicon chip may become a way for the family device to be integrated in the weight integrated circuit. The combination technology is mainly flip chip method, 171 epitaxial separation from the method of knocking oil 2 plus research. The combination technology of the Ming family of light-emitting devices and the integrated circuit of Gui has not yet been developed, and there are still many problems to be solved, such as reduced power consumption, increased speed and reduced occupied space. Alignment of integrated light of large array and silicon 79. After the technology is mature, the success of Group 1 light-emitting devices and 4 silicon chips will be applied to optical interconnects to achieve high-performance photoelectric signal processing.

2.2 Light-receiving device The light-receiving device is used to detect the light signal and generate electronic holes by absorbing light radiation, and convert the light signal into an electrical signal suitable for amplification and processing. From the point of view of working principle and structure, the light-receiving device mainly has a kind of 1-pole bamboo, which is used as a factory and a wood sign area; the metal semiconductors are all photodiodes, which work with two back-to-back Schottky barriers. ; Avalanche photodiode, which uses the avalanche multiplier to intrinsically release the detected signal. + Jizhu is the most mature and widely used.

As an optical device applied to the optical interconnection on the chip, the light receiving device is easier to implement than the light emitting device. This is because the silicon-based light-receiving device can be successfully fabricated directly on the silicon wafer, which is compatible with the standard Gui process 884. The silicon-based light-receiving device can detect the wavelength of 6jt + i, I, WiPt. The reaction speed is slow 8586 In this regard, many studies are devoted to improving the working speed of the light receiving device of the Gui integrated circuit. Tu et al. 85 used the buried collector in the 6 River 03 process to make a photodetector. The eye shape detection results received by the machine bit sequence are extremely clear. It is predicted that the data processing capability of the light receiving device manufactured by the submicron process will exceed 83. 1998, the world, 1 review; etc. The light-receiving device made under 0.33, 5 Ding Yi Bian has 10. The power consumption of this device under the operating voltage of 22 is the power consumption of the receiving device. In the design of power consumption, the power consumption of the light receiving device should be in the order of magnitude to ensure that the power consumption of the entire chip is sufficiently low when a large number of optical interconnects are used.

In addition to crystalline silicon photodetectors, there are also porous silicon photodetectors. The advantage of 1 is that 4 detects light of not 1 wavelength. Xian et al. Has become a very sensitive porous detector that can detect light in the wavelength range of 4,075, and within the wavelength range of 6309001, the quantum efficiency is as high as 0.97.1. Optical device 4 detects light with wavelengths of 500, 600, and 800. 91. The stability of porous silicon light-receiving devices can be improved by rapid thermal methods.

Since the Group 1 light-receiving device requires additional processes to integrate it on the silicon wafer, it currently appears that it has little prospect of being applied to the optical interconnection in the future large-scale integrated circuits.

2.3 Optical transmission device The optical transmission device is a bridge connecting the light emitting device and the light receiving device. It guides the light wave emitted by the light emitting device to propagate along the designed route, and transmits the optical signal to the light receiving device 1.

From the perspective of transmission media, optical transmission devices are divided into two types: waveguide guided by refractive index and free space transmission using air as the medium. Among them, the latter transmits the optical signal to the light receiving device through the specially designed micro lens group. This method requires very high alignment in implementation, but it can transmit signals at a high density, and is adapted to the size reduction of the chip, so it has great potential for optical interconnection and has been extensively studied in depth 1. However, current research shows that free space optical interconnection is mostly applicable to optical interconnection between systems and systems or between chips.

The optical interconnection on the chip is mainly realized in the form of a waveguide.

A waveguide is an axisymmetric optical signal transmission line with a rectangular cross section. It uses the difference in refractive index between the waveguide itself and the surrounding medium to achieve light propagation along the waveguide. Its performance depends on factors such as the loss of refractive index geometry. Divided from the geometric shape, there are several types of convex waveguide embedded in the strip waveguide ridge waveguide buried waveguide and so on. In order to be applied to the optical interconnection on the chip, it is hoped that the waveguide can be compatible with standard silicon integrated circuits, can transmit the operating wavelengths of the light emitting device and the light receiving device with high density, and has small signal loss and small occupied area.

At present, there have been many studies on silicon-based waveguides. More typical signals travel along the path defined by the material. Since the refractive index difference between 3 and 2 is very large, the 5, 2 and 3, 2 layers in the 2,501 waveguide structure can be made very thin for long-wavelength light emitting devices and light receiving devices and 105 Integrated circuits are integrated. The preparation method of 01 mainly uses aerobic ion implantation separation technology 30, the back side corrosion bonding technology and the sticky cutting technology are also strict, and the shape of 0141 to achieve a variety of functions, such as directional coupler 14, 310 knock 1; 1 Wave splitter knocks 1 he 1 minute wavelength multi-liWDM, wavelength division multiplexer, etc. These functions enhance the diversity and adaptability of optical signal transmission in silicon integrated circuits. The signal loss of a bamboo-shaped 0 1 direction coupler prepared by a first-class waiter is only about 1.918. This device is 2 high and 2 wide! The distance between the two waveguides in the coupling area is known as the coupling length range. The research team also used this structure to prepare the under-star training device 12 and the split-wavelength multiplexer 1. These devices are optical The main components of the company. Using the 301 structure, a kind of anti-resonant reflected light wave 4-core ROW, antiresonant reflecting optical waveguide K1 vertical coupling device can be made to realize the connection of optical signals between different layers on the silicon wafer. The others have optimized the design of the material and size of each layer of the 301 structure, so that the coupling efficiency of the device is as high as 9, and the length of the device is only 80. 1. In the structure, the thickness of the optical signal transmission layer is 7. This person only only 01 device can be applied to the dimension light interconnection of silicon integrated circuits. The above research shows that the 301 technology has great advantages in the realization of low-combination wood-to-dye-to-circuit optical connection.

Silicon-based waveguides also have 5, materials, porous silicon materials and so on.

The sub-waveguide is made on 3 substrates, and the working wavelength of the transmitted light wave can change with the change. ⑵Yu et al. The waveguide prepared by selecting the epitaxial bucket length method can propagate 1.3 and 1.5 light waves, and the signal loss is only 1.7. The refractive index of the porous anvil material is variable in the range of 1.3 to 3.0 depending on the half of the hole. Therefore, the porous silicon waveguide can work in the wavelength range from light to infrared light. Its advantage is that it can be directly integrated with the working area of ​​the light emitting diode and the light detector. In 1998, people 1.1.

When the copper is ready, it can work, 16331.151.3 and 1.5, 1 degree is 10, need to improve and shrink.

The operating wavelength is from 1.3 to 1.53. However, due to the integration problem with silicon integrated circuits, the use of Group 1 waveguides on the chip is unfavorable.

3 Conclusion steps developed to 3 bamboo, 2 times, that is, the storage capacity from 1 to 1 lan, the clock frequency of the integrated circuit device has been developed to Ding pressure, the data transmission rate has been developed from 8 to Ding 82. During the development process, the metal interconnection system on integrated circuit chips, especially the long bus interconnection, faced difficulties that were difficult to solve. Optical selection based on a new physical mechanism is the most likely option to solve this difficulty. Flash does not require new breakthroughs in physical principles, and has many potential advantages. Although there are still many problems in process technology and the future production costs cannot be estimated, it still attracts many microelectronics and optoelectronics technologies. Close attention of personnel and investment in scientific research.

In 6 Guiji light emitting devices in recent years. There are many studies on porous silicon light-emitting devices. Advance; 4 is faster. It seems that in terms of the stability and luminous efficiency indicators it achieves, there is still a long way to go before it is actually used in optical interconnection. Therefore, although silicon-based light-receiving devices and silicon-based optical transmitters already have experimental curtains for optical interconnections, we still lack silicon-based light-emitting devices that can be used for optical interconnections. Therefore, the realization of the all-silicon-based optical interconnection system still has a long way to go. This will be the most obstacle to the realization of high-yield and low-cost optical mutual selection on chips.

The light-emitting device is based on a group 1 semiconductor material, 03 or multi-quantum well semiconductor laser; the light-receiving device uses, for example, a silicon-based light-receiving device, the light-transmitting device uses a silicon-based, 1-waveguide, and the family-type light-emitting device is integrated with the broken 18 The integration of the circuit uses soldering key technology, it seems; 1 before the actual view of the chip on the other side to choose the most companion camp. There is no doubt that the implementation of this solution also needs to continue the optimization and practical research on the technology and characteristics of the selected device and the integration of the group 1 light-emitting device with silicon and the integrated circuit chip of 3 integrated circuits. In addition, this solution + only needs to make 1 technology for manufacturing Guiqing IC integrated base light-receiving devices and tandem optical transmitters. However, most of their processes are compatible, and they need to use the manufacturing of light based on Group 1 materials The device and its integration technology with silicon 0.03 IC chips, people have reason to worry about the low yield and high cost due to the diversity of technology and the difficulty of the technology will be eased with the mature history of the technology It is the ancient chip glazing technology that will eventually be accepted by industry.

The estimation of integrated circuit technology and performance limitations is again BPfiHlrJliPirjPlfit's crimes. Deng and Huai Xunyou have recently come to the consensus of most experts who have made predictions about the development of integrated circuits.

The research and implementation of on-chip optical interconnection not only promotes the integration of integrated circuits to a higher level, but also has a bottleneck significance for the development of high operating frequency and high transmission rate, but also for the development and application of optoelectronic technology such as comprehensive application of photonic optoelectronic And the new computer concept of microelectronic technology is neither a photonic computer nor an electronic computer, and its formation and design and production also have great significance. Therefore, the driving force for research and development of this technology is great, although currently facing severe technical and cost challenges, as long as the existing results are strengthened, continue to research and develop high-density optical on chip The realization of interconnection in the laboratory, which will enter perfection and pre-production around 2012, and eventually be adopted by the industry are also expected to be achieved. 2000 Anal Jianping, Semiconductor Laser, Electronics Industry Press, 2000.

2000 Wang Yangyuan, Tenth Century Microelectronics Technology Development Trend, China Electronics News, April 28, 2000, 8th edition.