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With the continuous advancement of semiconductor technology, it provides an advanced technology platform for system designers and circuit designers to realize technological innovation, so that many novel and fashionable portable electronic products are presented to the world, such as PDA and 3G mobile phones. , a variety of personal electronic health care devices and endless game consoles and so on. Most of these portable electronic products require high-end switching power supplies for powering or charging. In addition, there are many advanced portable instrumentation, industrial control devices and even everyday appliances such as razors that require switching power supplies. It is against this background that PHILIPS has launched the STARplug power IC product line.
This series not only meets the requirements of micro power consumption, high reliability, and miniaturization of portable electronic products, but also meets the requirements of safety and environmental protection.
About the STARplug product line
STARplug has two series, TEA152X series and TEA162X series (see Table 1). The TEA152X series was introduced as early as September 2000. The TEA162X series is an improvement of the TEA152X series, which was finalized in May 2004. The two are in block diagram, circuit structure, external lead arrangement and most electrical parameters. Are the same. The difference is only in the internal high-voltage starting current source of the chip, TEA152X series Icharge=1.5mA (typical), TEA162X series Icharge=500uA (typical).
STARplug uses a multi-chip architecture. All control sections are integrated on one chip using a BiCMOS process, while the power section is fabricated on another chip using the EZ-HV process and then optimized on the same substrate. From the manufacturing process point of view, Philips uses an advanced full oxidation isolation process (or media isolation process), so it has the following characteristics:
1. The lock-in effect can be dispensed with (the lock-in effect is a failure mode unique to CMOS circuits);
2. It is easy to integrate analog, digital and power circuits on the same chip;
3. The chip area is also smaller than the standard PN junction isolation;
4. Leakage current is extremely low, suitable for working in high temperature environment;
5. The parasitic capacitance is small, and the probability of crosstalk and EMC generated through the substrate is small;
6. Strong ability to resist external sparks and reverse polarity.
These are all beneficial to support the high performance and reliability of STARplug.
From the perspective of circuit design, an important feature is the concept of valley conversion.
In general, the power dissipated by the power MOSFET is the main source of power consumption of the switching power supply. It is closely related to the reliability, stability and efficiency of the power supply. The power consumption of a power MOSFET is usually composed of three parts:
1. The power consumption when the MOS transistor is turned off, that is, the power consumption of VDS is high: This power consumption is mainly determined by the leakage current between the drain D and the source S, which is related to the chip manufacturing process, IDS(off) Usually in the order of micro-amps, so this part of the power consumption is extremely low, generally negligible.
2. The power consumption when the MOS transistor is turned on, that is, the power consumption when VDS is low. This power consumption is mainly determined by the on-resistance RDS(on) between the drain and the source. This is related to the geometric parameters of the chip design.
3. MOS tube dynamic power consumption, that is, the MOS tube is switched by the cut-off conduction, or the power consumption from the turn-on to turn-off conversion. This power consumption can be calculated by:
Philips' circuit designers analyzed the above formula and realized that to reduce the dynamic power consumption of the switching power supply, it can only be achieved by reducing the VDS during conversion and the f when the load drops. Usually, the VDS is about 380V. If the VDS is turned to the bottom (close to 0V) by circuit resonance, the dynamic power consumption of the MOS transistor will be reduced by several orders of magnitude. For this reason, in the circuit design, a valley detection circuit is added, and once the circuit is resonated, the "valley" can be correctly measured, and when the VDS enters the "valley", the input between the gate G and the source S is input. The rising edge of the pulse after PWM.
In the PWM chips of the 1990s, the operating frequency f was mostly a fixed frequency. In order to reduce power consumption, especially to reduce standby power, STARplug has adopted a flexible circuit design with adjustable frequency. The frequency set by the user is the operating frequency at full load. When the load drops, the operating frequency also drops accordingly. This ensures that the standby power consumption is less than 100mW.
In addition, the STARplug series of chips are started with a high-voltage current source. Once the IC enters normal operation, the high-voltage current source will be automatically cut off, thus reducing the power consumption of the circuit. This shows the entire design process of the circuit. The idea of reducing power consumption has been implemented. It is precisely because the power MOSFET and the control part effectively reduce power consumption significantly, so that the power device and the control circuit can be integrated in one package, which effectively reduces Peripheral components. In addition, in order to make the circuit work reliably, it also provides perfect protection functions, including cycle-by-cycle overcurrent protection, undervoltage lockout, overvoltage protection, overtemperature protection, winding short circuit protection, and demagnetization protection.
STARplug function description
1. Structure of STARplug Figure 1 is a block diagram of the internal circuit of STARplug. It is not difficult to see that the figure includes two parts of the power MOS tube and the control circuit. The power MOS transistor is mainly used to realize power transmission and conversion. The control circuit has three major tasks:
1. Achieve rapid response to all protection functions.
2. Accurate detection of valley levels.
3. Control of the duty cycle (ie PWM function).
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