Three directions for the development of integrated circuit industry

In the past few decades, Moore's Law has guided the development of the integrated circuit industry, and the chip manufacturing process has also been advanced step by step. But in recent years, the chip shrinking cycle has gradually slowed down due to the limitations of silicon materials and equipment. In other words, Moore's Law is invalid.

Paolo Gargini, president of the Global Semiconductor Industry R & D Planning Blueprint Association, also said in the early years, according to the fastest development rate, by 2020, our chip circuits can reach the level of 2-3 nanometers, but at this level can only accommodate 10 atom. At this time, the electronics of the chip will be limited by the uncertainty of the quantum, the transistor becomes unreliable, and finding alternative materials and new technologies other than silicon has become the focus of engineers.

In order to continue the previous advancement of the chip, the Industrial Research Institute is exploring new solutions for chip evolution in terms of materials: More Moore, More than Moore, and Beyond CMOS have become the choices. Among them, More Moore and More than Moore are called non-silicon microelectronics.

Three directions for the development of integrated circuit industry

According to the definition, the so-called More Moore is to find a way to continue along the path of Moore's Law; what More than Moore is doing is to develop the so-called development part in the evolution process of the previous Moore's Law; what Beyond CMOS does is to invent the physics encountered in silicon-based CMOS New devices that can be relied upon at the limit. As shown in the figure below, according to the planning of ITRS and IRDS, after 10nm, high-migration non-silicon materials such as III-V semiconductors, SiGe and Ge; TFET, NC wary Beyond CMOS options such as light and spintronics will become industry pursuit New Direction.

Evolution of CMOS devices

But we should also see that there are more problems behind these new methods. For example, the leakage of More Moore, the multi-module package of More than moore, and the power bottleneck of Beyond CMOS.

Beyond CMOS power bottleneck

The electron mobility, hole mobility, standby mobility, and various characterization characteristics of these new technologies and new materials are all of great concern to everyone.

To this end, Professor Han Genquan of Xidian University made a speech entitled "Ge based Tunneling and Negative Capacitance FETs: Devices and Characterization" to analyze the ways and solutions behind the new ideas of chips.