TSMC's professional integrated circuit manufacturing service launches 28nm electric platform

Taiwan Semiconductor Manufacturing Co., Ltd. announced today (17th) that it is leading the professional integrated circuit manufacturing service field and successfully developed 28nm low-power technology, together with dual/triple oxide oxide technology. The silicon oxynitride (SiON)/polysilicon (polySi) material used in the 32nm process extends to the 28nm process, enabling semiconductors to continue to advance toward advanced process technologies. The advantages of this process technology include high-density and low Vcc_min six-transistor static random access memory (SRAM) components, low-leakage transistors, proven traditional analog/RF/electronic fuses (analog/RF/el Ecricalfuse) Component, low-resistance (low-RC) low dielectric copper wire (Cu-low-kinterconnect). This achievement was presented at the 2009 Symposiaon VLSI Technology and Circuits held in Kyoto, Japan.

In addition, this paper points out that the 64MbSRAM produced by the single-wafer technology of the 28nm dual/three-gate oxide system has excellent yield. The SRAM has a component size of 0.127 square micrometers and is quite competitive with a raw gate density of up to 3.9 million gates per square millimeter. The excellent performance in the SRAMVcc_min, electronic fuse and analog fields is sufficient to demonstrate the manufacturability of this process technology.

This leading process technology once again demonstrates TSMC's commitment and capability to provide customers with cost-effective solutions for low-power, high-efficiency processes using silicon oxynitride/polysilicon materials. In this paper, the crystals produced by the silicon sulphide material optimized by straining engineering and highly competitive oxide thickness are compared with the 45-nanometer process technology of the previous generation. Not only the speed is increased by 25~40%, the operating power consumption is reduced by 30~50%, and it also has the advantages of low standby and low operating power consumption.

Dr. Sun Yuancheng, deputy general manager of research and development at TSMC, said that this progress is due to the close cooperation between customers and TSMC. Customers need to use 28nm technology to break through new areas of semiconductor applications, and our continued advancement in innovation will help implement the most advanced applications designed by innovators in the semiconductor industry.

As early as September 2008, TSMC announced that it will position the 28-nanometer process as a full-generation (FullNode) process, providing customers with energy-efficient high-performance and low-power process technology, and is expected to begin production in early 2010. TSMC expects to provide customers with 28nm technology platform in accordance with the original schedule.