Tunnel diode pulse circuit principle and application circuit - Power Circuit - Circuit Diagram

Because of the pulse circuit of the tunnel diode, the structure is simple, the change speed is fast, and the power consumption is small. Therefore, it is widely used in high-speed pulse technology, and a tunnel diode can be used to form a bistable circuit, a monostable circuit, a multi-resonant circuit, and the like. Shaping and frequency dividing circuits, etc.

First, the volt-ampere characteristics of the tunnel diode and its parameters The volt-ampere characteristics of the tunnel diode [see Figure 1 (a)] is an S-shaped characteristic curve. The maximum current point P in the curve is called the peak point; the minimum current point V, called the valley point, is the main parameter of the tunnel diode:
(1) Peak point voltage Up, about several tens of millivolts, valley voltage Uv, about several hundred millivolts (2) peak point current Ipi, about a few milliamps, valley current Iv about several hundred microamperes (3) peak Valley current ratio, about 5-6, the bigger the better (4) Valley capacitance Cv, a few microfarads to tens of microfarads, the smaller the better, domestic 2BS4A: Up = 80 mV, Ip = 4 mA, Peak-to-valley current ratio ≥ 5, Cv = 10 to 15 microfarads, Uv = 280 millivolts.