Abstract The University of Arkansas has recently developed a silicon carbide high-temperature integrated circuit. The circuit chip can still work normally at a high temperature of around 350 °C, greatly improving the processors, drive systems, controllers and other power electronics, automotive and aerospace equipment. The performance of some digital circuits...
The University of Arkansas has recently developed a silicon carbide high-temperature integrated circuit. The circuit chip can still work normally at a high temperature of around 350 °C, greatly improving the processors, drive systems, controllers and others in power electronics, automotive and aerospace equipment. The performance of digital circuits. The study was sponsored by the National Science Foundation (NSF).
Silicon Carbide Chips with 1000 Independent Circuit Units Developed by the University of Arkansas
Compared to traditional silicon-based components, silicon carbide circuit wafers are more adaptable to harsh high-temperature operating environments, Professor Alan Mantooth said. This new circuit module improves the performance of signal processing technology, controllers and driver circuits.
According to statistics, about one-third of the total power generation in the United States must pass through power electronic converters or motor-driven equipment to achieve power conversion and control before reaching the end users. These devices require components with extreme heat-resistant performance and are assembled with integrated modules to reduce equipment size and save floor space. The design of silicon carbide integrated circuits not only satisfies these requirements, but also greatly increases the electrical efficiency of the equipment. .
The SiC circuit chip developed by the University of Arkansas is not only resistant to ultra-high voltage, but also a good thermal conductor; no additional heat dissipation equipment is required in high-temperature working environments. Under the leadership of computer engineering professors Manhattan and Jia Di, the R&D team combines the superior performance of SiC with the wide temperature design technology. In power electronics and integrated circuits, workers use complementary SiC phase-locked loop (PLL) technology to perform a series of basic analog, digital, and mixed-signal blocks. A PLL is a control system that produces an output signal whose phase is related to the phase of the input signal. This principle of operation plays a crucial role in circuit applications such as signal synchronization, frequency synthesis, and modulation and demodulation.
The University of Arkansas' research and development of this silicon carbide high-temperature integrated circuit is part of the NSF's innovative capacity building program. NSF transforms scientific theory into experimental results and product prototypes through research collaboration with universities and colleges, and finally promotes market-oriented integration. Commercialization of circuit technology. (Chinese superhard material network translation: Wang Xian)
